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| BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-983D (Z) 5th. Edition Dec. 2000 Features * * * * Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. * Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Marking is "DS-". BB504C is individual type number of HITACHI BBFET. BB504C Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 -0 +6 -0 30 100 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 -- -- 0.6 0.6 13 24 1.7 1.0 -- 25 -- 17 -- Typ -- -- -- -- -- 0.85 0.85 16 29 2.1 1.4 0.027 30 1.0 22 1.75 Max -- -- -- +100 +100 1.1 1.1 19 34 2.5 1.8 0.05 -- 1.8 -- 2.3 Unit V V V nA nA V V mA mS pF pF pF dB dB dB dB Test Conditions I D = 200A, VG1S = VG2S = 0 I G1 = +10A, VG2S = VDS = 0 I G2 = +10A, VG1S = VDS = 0 VG1S = +5V, V G2S = VDS = 0 VG2S = +5V, V G1S = VDS = 0 VDS = 5V, VG2S = 4V, ID = 100A VDS = 5V, VG1S = 5V, ID = 100A VDS = 5V, VG1 = 5V VG2S = 4V, RG = 120k VDS = 5V, VG1 = 5V, VG2S =4V RG = 120k, f = 1kHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 120k f = 1MHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 120k f = 200MHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 120k f = 900MHz Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain (1) Noise figure (1) Power gain (2) Noise figure (2) I D(op) |yfs| c iss c oss c rss PG NF PG NF 2 BB504C Test Circuits * DC Biasing Circuit for Operating Characteristics Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1 A ID Drain Source * 200MHz Power Gain, Noise Figure Test Circuit VT 1000p VG2 1000p VT 1000p 47k Input(50) L1 1000p 36p 1000p 47k BBFET L2 1000p 47k Output(50) 10p max 1000p 1SV70 RG 120k RFC 1SV70 1000p V D = V G1 Unit Resistance () Capacitance (F) L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns 3 BB504C * 900 MHz Power Gain, Noise Figure Test Circuit VG1 VG2 C4 C5 VD C6 R1 R2 C3 G2 R3 D L3 RFC Output L4 Input L1 L2 G1 S C1 C2 C1, C2 C3 C4 to C6 R1 R2 R3 : : : : : : Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Air Capacitor (1000pF) 120 k 47 k 4.7 k L1: 10 10 L2: 26 3 3 (1mm Copper wire) Unit:mm 8 21 L4: 29 10 7 7 10 L3: 18 RFC : 1mm Copper wire with enamel 4turns inside dia 6mm 4 BB504C Maximum Channel Power Dissipation Curve Typical Output Characteristics 20 82 k 1 15 12 00 k 0 0 k k Pch (mW) 200 I D (mA) 16 Channel Power Dissipation 12 100 Drain Current RG 150 =6 V G2S = 4 V V G1 = VDS 8k 8 50 k 0 18 0k 22 4 0 50 100 150 Ta (C) 200 0 Ambient Temperature 1 2 3 Drain to Source Voltage 4 5 V DS (V) Forward Transfer Admittance |y fs | (mS) Drain Current vs. Gate1 Voltage 20 V DS = 5 V R G = 120 k 4V Forward Transfer Admittance vs. Gate1 Voltage 30 V DS = 5 V R G = 120 k f = 1 kHz 4V 3V I D (mA) 16 24 12 3V 2V 18 2V Drain Current 8 12 4 VG2S = 1 V 6 VG2S = 1 V 0 1 2 Gate1 Voltage 3 V G1 4 (V) 5 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 5 BB504C Power Gain vs. Gate Resistance 40 Noise Figure vs. Gate Resistance 4 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200MHz Power Gain PG (dB) Noise Figure NF (dB) 35 30 25 20 15 10 10 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 20 50 100 200 500 1000 Gate Resistance R G (k ) 3 2 1 0 10 20 50 100 200 500 1000 Gate Resistance R G (k ) Power Gain vs. Gate Resistance 40 35 4 Noise Figure vs. Gate Resistance V DS = 5V V G1 = 5 V V G2S = 4 V f = 900 MHz Power Gain PG (dB) Noise Figure NF (dB) 3 30 25 20 15 10 10 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 900 MHz 20 50 100 200 500 1000 Gate Resistance R G (k ) 2 1 0 10 20 50 100 200 500 1000 Gate Resistance R G (k ) 6 BB504C Input Capacitance vs. Gate2 to Source Voltage 4 Input Capacitance Ciss (pF) 30 Drain Current I D (mA) Drain Current vs. Gate Resistance 3 20 2 10 V DS = VG1 = 5 V V G2S = 4 V 0 10 1 V DS = VG1 = 5 V R G = 120 k f = 1 MHz 0 1 2 3 4 20 50 100 200 500 1000 Gate Resistance R G (k ) 0 Gate2 to Source Voltage V G2S (V) Gain Reduction vs. Gate2 to Source Voltage 0 Gain Reduction GR (dB) Gain Reduction GR (dB) 0 Gain Reduction vs. Gate2 to Source Voltage 10 10 20 20 30 VDS = VG1 = 5 V R G = 120 k f = 200MHz 30 V DS = V G1 = 5 V R G = 120 k f = 900MHz 4 3 2 1 0 40 40 50 4 3 2 1 0 50 Gate2 to Source Voltage V G2S (V) Gate2 to Source Voltage V G2S (V) 7 BB504C S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 - .2 -5 -4 -3 - .4 - .6 - .8 - 1.5 -2 - 120 - 90 - 60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 1 / div. 60 - 150 - 30 Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , R G = 120 k , Zo = 50 50 to 1000 MHz (50 MHz step) Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , R G = 120 k , Zo = 50 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.004/ div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 - .2 - 150 - 30 - .4 - 120 - 90 - 60 - .6 - .8 - 1.5 -2 -1 -5 -4 -3 Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , R G = 120 k , Zo = 50 50 to 1000 MHz (50 MHz step) Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , R G = 120 k , Zo = 50 50 to 1000 MHz (50 MHz step) 8 BB504C Sparameter (VDS = VG1 = 5V, VG2S = 4V, RG = 120k, Zo = 50) S11 f (MHz) MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1.000 0.993 0.991 0.984 0.978 0.970 0.958 0.954 0.945 0.932 0.920 0.910 0.900 0.887 0.870 0.863 0.853 0.839 0.827 0.819 ANG -3.3 -7.2 -10.9 -15.0 -19.0 -22.8 -26.7 -30.3 -33.8 -37.5 -40.6 -44.3 -47.5 -50.9 -54.4 -57.6 -60.9 -63.6 -66.5 -70.1 S21 MAG 2.80 2.78 2.77 2.74 2.72 2.68 2.64 2.60 2.56 2.50 2.46 2.41 2.37 2.31 2.27 2.22 2.18 2.12 2.07 2.04 ANG 175.9 170.9 166.1 161.2 156.5 151.8 147.2 142.7 138.6 134.1 129.8 125.7 121.6 117.8 113.6 110.0 105.8 102.2 98.6 94.9 S12 MAG 0.00106 0.00171 0.00253 0.00356 0.00442 0.00485 0.00576 0.00642 0.00689 0.00712 0.00765 0.00804 0.00798 0.00787 0.00785 0.00758 0.00721 0.00694 0.00716 0.00667 ANG 58.8 75.7 75.1 77.4 78.2 80.0 74.7 71.7 73.3 71.8 70.7 69.9 69.1 67.8 70.8 73.3 75.2 75.8 88.1 92.7 S22 MAG 0.990 0.992 0.991 0.987 0.985 0.982 0.978 0.973 0.968 0.963 0.958 0.952 0.947 0.942 0.936 0.929 0.924 0.917 0.912 0.906 ANG -2.4 -4.7 -7.2 -9.6 -12.2 -14.7 -17.1 -19.6 -22.0 -24.2 -26.7 -28.9 -31.3 -33.4 -35.8 -37.9 -40.3 -42.5 -44.5 -46.7 9 BB504C Package Dimensions As of January, 2001 Unit: mm 2.0 0.2 1.3 0.2 0.1 0.3 + 0.05 - 0.1 0.3 + 0.05 - 0.425 0.65 0.65 0.16- 0.06 2.1 0.3 + 0.1 1.25 0.1 0 - 0.1 0.2 0.9 0.1 0.65 0.6 1.25 0.2 0.425 0.1 0.3 + 0.05 - 0.1 0.4 + 0.05 - Hitachi Code JEDEC EIAJ Mass (reference value) CMPAK-4(T) -- Conforms 0.006 g 10 BB504C Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 11 |
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